Suppression of microloading effect by low-temperature sio2 etching

Japanese Journal of Applied Physics

Volumn 31, Issue 12 S, 1992, Pages 4370-4375

  Hara, Tohru ^b   Takehara, Daisuke ^a   Uda, Keichiro ^a   Sakiyama, Keizo ^a  

^a SHARP CORPORATION   (Japan)

^b HOSEI UNIVERSITY   (Japan)

Author keywords

Charge buildup; Low temperature etching; Merie; Microloading effect; Polymer film; Si 2 etching

Indexed keywords

CHEMICAL REACTIONS; INTEGRATED CIRCUIT MANUFACTURE; LOW TEMPERATURE ENGINEERING; POLYMERS; SILICA;

MICROLOADING EFFECTS; REACTIVE ION ETCHING;

ETCHING;

EID: 0026976685     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.4370     Document Type: Article

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