Low-temperature etching of 0.2 μ al patterns using a si〇2 mask

Japanese Journal of Applied Physics

Volumn 31, Issue 12 S, 1992, Pages 4376-4480

  Aoki, Hidemitsu ^a   Hashimoto, Toshiki ^a   Ikawa, Eiji ^a   Kikkawa, Takamaro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Al interconnection; Critical dimension shift; Dram; Dry etching; Low temperature etching; Microloading effect; SiO2 mask

Indexed keywords

ALUMINUM; INTEGRATED CIRCUIT MANUFACTURE; LOW TEMPERATURE ENGINEERING; MASKS; SILICA;

DRAM; DRY ETCHING; MICROLOADING EFFECTS;

ETCHING;

EID: 0026993155     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.4376     Document Type: Article

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