Dry Etching Topography Simulator with a New Surface Reaction Model: MODERN

IEEE Transactions on Electron Devices

Volumn 42, Issue 11, 1995, Pages 1903-1911

  Harafuji, Kenji ^a   Misaka, Akio ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; GASES; MATHEMATICAL MODELS; POLYMERS; REACTIVE ION ETCHING; SILICA; SPUTTERING;

HYDROFLUOROCARBON GASES; OVERHANG TEST STRUCTURE; PROFILE FITTING METHOD; SURFACE REACTIONS; TWO DIMENSIONAL STRING MODEL;

DRY ETCHING;

EID: 0029406058     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.469395     Document Type: Article

References (17)

1. W. G. Oldham, A. R. Neureuther, C. Sung, J. L. Reynolds, and S. N. Nandgaonkar, “A general simulator for VLSI lithography and etching process: Part II-Application to deposition and etching,” IEEE Trans. Electron Devices, vol. 27, pp. 1455-1459, 1980.
2. S. Yamamoto, T. Kure, M. Ohgo, T. Matsuzawa, S. Tachi, and H. Sunami, “A two-dimensional etching profile simulator: ESPRIT,” IEEE Trans. Computer-Aided Design, vol. CAD-6, pp. 417-422, 1987.
3. S. Tazawa, S. Matsuo, and K. Saito, “Unified topography simulator for complex reaction including both deposition and etching,” in Symp. VLSI Technol. 1989, pp. 45-46.
4. J. I. Ulacia F. and J. P. McVittie, “A two-dimensional computer simulation for dry etching using Monte Carlo techniques,” J. Appl. Phys., vol. 65, pp. 1484-1491, 1989.
5. J. P. McVittie, J. C. Rey, A. J. Bariya, M. M. IslamRaja, L. Y. Cheng, S. Ravi, and K. C. Saraswat, “SPEEDIE: A profile simulator for etching and deposition,” in Proc. SPIE Symp. Advanced Tech. Integrated Circuit Processing, vol. 1392, 1990, pp. 126-138.
6. V. K. Singh and S. G. Shaqfeh, “Simulation of profile evolution in silicon reactive ion etching with re-emission and surface diffusion,” J. Vac. Sci. Technol. B, vol. 10, pp. 1091-1104, 1992.
7. D. L. Flamm, C. J. Mogab, and E. R. Sklaver, “Reaction of fluorine atoms with Si02,” J. Appl. Phys., vol. 50, pp. 6211-6213, 1979.
8. P. Sigmund, “Theory of sputtering. I. Sputtering yield of amorphous and polycrystalline targets,” Phys. Rev., vol. 184, pp. 383-416, 1969.
9. Y. Y. Tu, T. J. Chuang, and H. F. Winters, “Chemical sputtering of fluorinated silicon,” Phys. Rev. B, vol. 23, pp. 823-835, 1981.
10. J. W. Coburn and H. F. Winters, “Ion- and electron-assisted gas-surface chemistry-An important effect in plasma etching,” J. Appl. Phys., vol. 50, pp. 3189-3196, 1979.
11. R. d'Agostino, “Plasma-assisted deposition of polymers,” Plasma-Surface Interactions and Processing of Materials, O. Auciello, A. Gras-Marti, J. A. Valles-Abarca, and D. L. Flamm, Eds. Dordrecht, The Netherlands: Kluwer, 1990, pp. 425-456.
12. A. Misaka, K. Harafuji, H. Nakagawa, T. Tamaki, M. Kubota, and N. Nomura, “A novel surface reaction model in dry-etching process simulator,” in Dig. Papers, 5th Int. Microprocess Conf, 1992, pp. 142-143.
13. K. Harafuji, A. Misaka, M. Kubota, and N. Nomura, “Dry-etching simulation with a new surface reaction model,” Shinkuu, vol. 35, pp. 925-934, 1992 (in Japanese).
14. K. Harafuji, A. Misaka, H. Nakagawa, M. Kubota, and N. Nomura, “Profile predictions in dry-etching by a new surface reaction model,” in IEDM Tech. Dig., 1992, pp. 169-172.
15. A. Misaka, K. Harafuji, M. Kubota, and N. Nomura, “Novel surface reaction model in dry-etching process simulator,” Jpn. J. Appl. Phys., vol. 31, pp. 4363-4369, 1992.
16. M. M. IslamRaja and M. A. Cappelli, “A 3-dimensional model for low-pressure chemical-vapor-deposition step coverage in trenches and circular vias,” J. Appl. Phys., vol. 70, pp. 7137-7140, 1991.
17. T. M. Mayer and R. A. Barker, “Simulation of plasma-assisted etching processes by ion-beam techniques,” J. Vac. Sci. & Technol., vol. 21, pp. 757-763, 1982.