A Simulation of Micro-Loading Phenomena in Dry-Etching Process using a New Adsorption Model

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 857-860

  Misaka, A ^a   Harafuji, K ^a   Nakagawa, H ^a   Kubota, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; SILICA; WET ETCHING; ADSORPTION; ETCHING; INTEGRATED CIRCUIT MANUFACTURE; MATHEMATICAL MODELS; VLSI CIRCUITS;

ADSORPTION MODELING; DRY ETCHING PROCESS; ETCHING PROFILE; ETCHING RATE; ETCHING SELECTIVITY; HOLE ETCHING; HYDRO-FLUOROCARBON GAS; MICROLOADING; RATE PROFILES; RATE SELECTIVITY;

SURFACE REACTIONS; SURFACE PHENOMENA;

DRY ETCHING; HOLE GEOMETRY; MICRO LOADING PHENOMENA;

EID: 0027815545     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A.Misaka, K.Harafuji, M.Kubota and N.Nomura, Jpn.J.Appl.Phys. vol.31, 1992, p.4363.
2. K.Harafuji, A.Misaka, H.Nakagawa, M.Kubota and Nomura, Tech. Digest 1992 IEDM, p.169.
3. M.M.IslamRaja, M.A.Cappelli, J.P.McVittie and K.C.Saraswat, J.Appl.Phys. vol.70, 1991, p.7137.