Profile predictions in dry-etching by a new surface reaction model

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 169-172

  Harafuji, K ^a   Misaka, A ^a   Nakagawa, H ^a   Kubota, M ^a   Nomura, N ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRON DEVICES; ION BOMBARDMENT; SILICA;

ADSORBED PARTICLES; DRY ETCHING PROCESS; HYDROFLUOROCARBONS; PROFILE PREDICTION; SUBSTRATE SURFACE; SURFACE PROFILES; SURFACE REACTION MODELS; TEST STRUCTURE;

SURFACE REACTIONS;

EID: 33747632544     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307334     Document Type: Conference Paper

References (5)

1. S. Tazawa, S. Matsuo and K. Saito, "Unified Topography Simulator for Complex Reaction including both Deposition and Etching, " Symp. VLSI Technology, 1989, pp45-46.
2. J. I. Ulacia F. and J. P. McVittie, "A Two-Dimensional Computer Simulation for Dry Etching using Monte Carlo Techniques, " J. Appl. Phys. vol. 65, 1989, ppl484-1491.
3. A. Misaka, K. Harafuji, H. Nakagawa, T. Tatnaki, M. Kubota and N. Nomura, "A Novel Surface Reaction Model in Dry-Etching Process Simulator, " Digest of Papers Microprocess Conf. 92, 1992, ppl42-143.
4. M. Mazhar IslamRaja and M. A. Cappelli, "A 3-Dimensional Model for Low-Pressure Chemical-Vapor-Deposition Step Coverage in Trenches and Circular Vias, " J. Appl. Phys. vol. 70, 1991, pP7137-7140.
5. J. P. McVittie, J. C. Rey, A. J. Banya, M. M. IslamRaja, L. Y. Cheng, S. Ravi and K. C. Saraswat, "SPEEDIE: A Profile Simulator for Etching and Deposition, " Proc. SPIE Symp. vol. 1392, 1990.