Observation of Velocity Overshoot in Silicon Inversion Layers

IEEE Electron Device Letters

Volumn 14, Issue 10, 1993, Pages 484-486

  Assaderaghi, Fariborz ^a   Ko, Ping Keung ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON VELOCITY ANALYZERS; GATES (TRANSISTOR); MATHEMATICAL MODELS; MONTE CARLO METHODS; NUMERICAL ANALYSIS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

CHANNEL LENGTH; DRIFT VELOCITY; ELECTRON VELOCITY OVERSHOOT; SILICON INVERSION LAYERS;

MOSFET DEVICES;

EID: 0027678066     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.244738     Document Type: Article

References (8)

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