High-field drift velocity of electrons in silicon inversion layers

Solid State Electronics

Volumn 31, Issue 1, 1988, Pages 99-104

  Modelli, A ^a   Manzini, S ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET - MATHEMATICAL MODELS;

ELECTRON DRIFT VELOCITY; RESISTIVE-GATE MOSFET; SILICON INVERSION LAYER;

ELECTRONS;

EID: 0023831987     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(88)90091-3     Document Type: Article

References (16)

1. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
2. Drift-Velocity Saturation of Holes in Si Inversion Layers
3. Velocity saturation in short channel field effect transistors
4. A review of some charge transport properties of silicon
5. High-accuracy MOS models for computer-aided design
6. Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's
7. EEC CAD VLSI for Telecommunications Project
8. A physically based mobility model for MOSFET numerical simulation