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Volumn 54, Issue 3, 1983, Pages 1445-1456
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High-field drift velocity of electrons at the Si-SiO2 interface as determined by a time-of-flight technique
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Author keywords
[No Author keywords available]
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Indexed keywords
SEMICONDUCTOR DEVICES;
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EID: 0020717155
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.332170 Document Type: Article |
Times cited : (119)
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References (21)
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