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Volumn 54, Issue 3, 1983, Pages 1445-1456

High-field drift velocity of electrons at the Si-SiO2 interface as determined by a time-of-flight technique

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0020717155     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.332170     Document Type: Article
Times cited : (119)

References (21)
  • 5
    • 84952284330 scopus 로고
    • Jr. and D. F. Nelson, IEEE Device Research Conference, June, Ithaca, New York.
    • (1980)
    • Cooper, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.