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Volumn 28, Issue 4, 1985, Pages 407-416

An investigation of steady-state velocity overshoot in silicon

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - VELOCITY MEASUREMENT; PARTICLE BEAMS - DIFFUSION; SEMICONDUCTOR DEVICES, MOSFET - DESIGN;

EID: 0022044296     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(85)90100-5     Document Type: Article
Times cited : (283)

References (24)
  • 1
    • 0001269324 scopus 로고
    • Calculation of the Distribution Functions by Exploiting the Stability of the Steady State
    • (1969) J. Phys. Chem. Solids , vol.30 , pp. 643-655
    • Rees1
  • 3
  • 5
    • 33747239790 scopus 로고
    • Influence of Nonuniform Field Distribution on Frequency Limits of GaAs Field-Effect Transistors
    • (1976) Electronics Letters , vol.12 , pp. 615-616
    • Shur1
  • 9
    • 0346872785 scopus 로고
    • High-Frequency Conductivity, Carrier Waves, and Acoustic Amplification in Drifted Semiconductor Plasmas
    • (1966) Ericsson Technics , vol.22 , pp. 125-183
    • Blotekjaer1
  • 15
    • 0020142314 scopus 로고
    • An Efficient Technique for Two-Dimensional Simulation of Velocity Overshoot Effects in Si and GaAs Devices
    • (1982) COMPEL , vol.1 , pp. 65-87
    • Cook1    Frey2
  • 20
    • 84945709150 scopus 로고
    • Iterative Procedures for Non-Linear Integral Equations
    • (1965) A.C.M. Journal , vol.12 , pp. 547-560
    • Anderson1
  • 23
    • 36149018649 scopus 로고
    • Diffusion of Hot and Cold Electrons in Semiconductor Barriers
    • (1962) Phys. Rev. , vol.126 , pp. 2002-2014
    • Stratton1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.