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Volumn 28, Issue 4, 1985, Pages 407-416
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An investigation of steady-state velocity overshoot in silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRONS - VELOCITY MEASUREMENT;
PARTICLE BEAMS - DIFFUSION;
SEMICONDUCTOR DEVICES, MOSFET - DESIGN;
VELOCITY OVERSHOOT EFFECTS;
SEMICONDUCTING SILICON;
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EID: 0022044296
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(85)90100-5 Document Type: Article |
Times cited : (283)
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References (24)
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