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Journal of Applied Physics
Volumn 51, Issue 4, 1980, Pages 2127-2136
Relation of drift velocity to low-field mobility and high-field saturation velocity
Author keywords

[No Author keywords available]
Indexed keywords

SOLID STATE DEVICES;
EID: 0019003692     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.327885     Document Type: Article
Times cited : (169)
References (26)
  • 5
    • 84951372471 scopus 로고    scopus 로고
    • One may question the applicability of both crystal momentum and the Boltzmann equation to electrons and holes confined to an inversion region. For such cases, we refer to p, E, and F as two‐dimensional parallel to the plane of the interface, replace [formula omitted] by an appropriate quantum number, and include [formula omitted] and [formula omitted] only in the scattering rates. For transport problems subtleties of inversion‐layer wave functions, etc., are often included only in these scattering rates, usually in the form of simple relaxation times.6–9 For our purposes here, we can accept these approximations, especially since our interest is in drift velocity at temperatures around 300 to 380 °K where most of the interesting quantum features of the inversion layer studied at very low temperatures ([formula omitted] or even [formula omitted]) are substantially smeared out
  • 10
    • 84951372475 scopus 로고    scopus 로고
    • A more serious consideration is the modification of Eq. (2.1) for high F as originally derived in Ref. 11. As our results are also valid for the more general expression, we shall use Eq. (2.1) for simplicity.
  • 12
    • 84951372474 scopus 로고    scopus 로고
    • Henceforth low‐field mobility and high‐field saturation velocity will be referred to as simply mobility (μ) and saturation velocity [formula omitted] respectively.
  • 15
    • 84951372482 scopus 로고    scopus 로고
    • Empirically one can simply note that the shifts shown in Figs. 1 and 2 are the only ones which change μ or [formula omitted] and leave the other invariant.
  • 20
    • 84951372480 scopus 로고    scopus 로고
    • According to Ref. 21, at room temperature phonon scattering and surface‐roughness scattering dominate impurity scattering and determine the mobility.
  • 24
    • 84951372478 scopus 로고    scopus 로고
    • When the entire [formula omitted] relation is considered, temperature T, lattice or electron, is very difficult to scale by itself. See Figs. 1, 2, and 3 of Ref. 25, for example, to note the distortion in [formula omitted] as T increases from well below to well above the optical‐phonon energy.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.