Hot electron effects and saturation velocities in silicon inversion layers

Journal of Applied Physics

Volumn 41, Issue 4, 1970, Pages 1825-1831

  Fang, F F ^a   Fowler, A B ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A T; JAPIA; SEMICONDUCTORS;

EID: 0014749359     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1659111     Document Type: Article

References (16)

1. For example
2. For the operation of these devices, see, e.g.
3. Ref. 2