Monte Carlo simulation of hot-carrier transport in real semiconductor devices

Solid State Electronics

Volumn 32, Issue 12, 1989, Pages 1723-1729

  Fischetti, M V ^a   Laux, S E ^a   Lee, W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

band structure; Coulomb interaction; hot carriers; Monte Carlo simulation; Semiconductor devices

Indexed keywords

MATHEMATICAL STATISTICS - MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; TRANSISTORS, BIPOLAR; TRANSISTORS, FIELD EFFECT;

COULOMB INTERACTION; HOT-CARRIER TRANSPORT; LOGIC-CIRCUIT-ORIENTED MOSFET; MESFET; MONTE CARLO-POISSON DEVICE-SIMULATION PROGRAM; ZINC-BLEND SEMICONDUCTORS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024888510     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90302-X     Document Type: Article

References (30)

1. Performance of a quarter-micrometer-gate ballistic electron HEMT
2. Spectroscopic and electrical studies of GaAs metal–oxide semiconductor structures
3. Monte Carlo calculations on hot electron energy tails
4. Collective Energy Losses in Solids
5. Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's
6. Physics at the Limits of VLSI Scaling
7. Modeling of 0.1-µm MOSFET on SOI structure using Monte Carlo simulation technique