Monte-Carlo Simulation of Submicrometer Si n-MOSFET's at 77 and 300 K

IEEE Electron Device Letters

Volumn 9, Issue 9, 1988, Pages 467-469

  Laux, Steven E ^a   Fischetti, M V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONS -- SCATTERING; MATHEMATICAL STATISTICS -- MONTE CARLO METHODS;

ELECTRON-ELECTRON SCATTERING; MONTE-CARLO SIMULATION; SILICON BAND STRUCTURE; VELOCITY OVERSHOOT;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024070809     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.6947     Document Type: Article

References (14)

1. G. A. Sai-Halasz et al., “Design and experimental technology for 0.1-μm gate-length low-temperature operation FET's”, IEEE Electron Device Lett., vol. EDL-8, pp. 463-466, Oct. 1987.
2. G. A. Sai-Halasz et al., “High transconductance and velocity overshoot in NMOS devices at the 0.1-μm gate-length level”, IEEE Electron Device Lett., vol. 9, pp. 464-466, Sept. 1988.
3. R. W. Hockney and J. W. Eastwood, Computer Simulation Using Particles. New York: McGraw-Hill, 1981.
4. K. Throngnumchai, K. Asada, and T. Sugano, “Modeling of 0.1-μm MOSFET on SOI structure using Monte Carlo simulation technique”, IEEE Trans. Electron Devices, vol. ED-33, pp. 1005-1011, 1986.
5. M. Tomizawa, K. Yokoyama, and A. Yoshii, “Nonstationary carrier dynamics in quarter-micron Si MOSFET's”, IEEE Trans. Computer-Aided Des., vol. 7, pp. 254-258, Feb. 1988.
6. E. M. Buturla et al., “Finite-element analysis of semiconductor devices: The FIELDAY program”, IBM J. Res. Develop., vol. 25, pp. 218-231, July 1981.
7. T. Kobayashi and K. Saito, “Two-dimensional analysis of velocity overshoot effects in ultrashoot-channel Si MOSFET's”, IEEE Trans. Electron Devices, vol. ED-32, pp. 788-792, 1985.
8. A. Forghieri et al., “A new discretization strategy of the semiconductor equations comprising momentum and energy balance”, IEEE Trans. Computer-Aided Des., vol. 7, pp. 231-242, Feb. 1988.
9. M. V. Fischetti and S. E. Laux, “Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects”, to be published in Phys. Rev. B.
10. M. L. Cohen and T. K. Bergstresser, “Band structures and pseudopotential form factors for fourteen semiconductors of the diamond and zinc-blend structures”, Phys. Rev., vol. 141, pp. 789-796, 1966.
11. J. Y.-F. Tang and K. Hess, “Impact ionization of electrons in silicon (steady state)”, J. Appl. Phys., vol. 54, pp. 5139-5144, 1983.
12. A. Matulionis, J. Pozela, and A. Reklatis, “Monte Carlo treatment of electron-electron collisions”, Solid State Comm., vol. 16, pp. 1133-1137, 1975.
13. A. Phillips and P. J. Price, “Monte Carlo calculations of hot electron energy tails”, Appl. Phys. Lett., vol. 30, pp. 528-530, 1977.
14. A. Modelli and S. Manzini, “High-field drift velocity of electrons in silicon inversion layers”, Solid-State Electron., vol. 31, pp. 99-104, 1988.