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Journal of Applied Physics
Volumn 63, Issue 9, 1988, Pages 4718-4722
On the flow equation in device simulation
Author keywords

[No Author keywords available]
Indexed keywords

EID: 0003326917     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.340128     Document Type: Article
Times cited : (38)
References (12)
  • 3
    • 84950798603 scopus 로고    scopus 로고
    • IBM Report RC 11769 (to be published).
    • Dumke, W.P.1
  • 5
    • 0004966122 scopus 로고
    • [The results, for a model n-Si, essentially agree with (4) for saturation fields, but for relatively small fields L is found to be negative].
    • (1988) Appl. Phys. Lett , vol.52 , pp. 141
    • Artaki, M.1
  • 11
    • 0040200755 scopus 로고
    • Monte Carlo computations on the energy and momentum regressions for n-Si at 300 K [R. Brunetti (private communication)], similar to those for n-Si at 77 K ,show appreciable cross correlations which indicate that Eq. (18) and its consequences may be viewed with some reserve in the present case.
    • (1984) Phys. Rev. B , vol.29 , pp. 5739
    • Brunetti, R.1    Jacoboni, C.2

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.