Current Equations for Velocity Overshoot

IEEE Electron Device Letters

Volumn 3, Issue 3, 1982, Pages 69-71

  Thornber, K K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0020103264     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1982.25482     Document Type: Article

References (16)

1. K. K. Thornber, “Applications of path integrals to problems in dissipation,” Path Integrals, pp. 359-382, G. J. Papadopoulos and J. T. Devreese, eds., NY: Plenum Press, Inc., 1978.
2. K. K. Thornber, “High-field electronic conduction in insulators,” Solid-State Electron., vol. 21, pp. 259-266, January 1978.
3. J. G. Ruch, “Electron dynamics in short channel field-effect transistors,” IEEE Trans. Electron Devices, ED-19, pp. 652-654, May 1972.
4. C. Jacoboni, C. Canali, G. Ottaviani and A. A. Quaranta, “A review of some charge transport properties of silicon,” Solid-State Electron., vol. 20, pp. 77-89, January 1977.
5. C. Jacoboni and L. Reggiani, “Bulk hot-electron properties of cubic semiconductors,” Advances in Physics, vol. 28, pp. 493-553, April 1979.
6. C. V. Shank, R. L. Fork, B. I. Greene, F. K. Reinhart and R. A. Logan, “Picosecond nonequilibrium carrier transport in GaAs,” Appl. Phys. Lett, vol. 38, pp. 104-105, January 1981.
7. S. J. Allen, D. C. Tsui, F. DeRosa, K. K. Thornber and B. A. Wilson, “Direct measurement of velocity overshoot by hot electron, submillimeter wave conductivity in silicon inversion layers,” Proc. of the Third Int. Conf. on Hot Electrons in Semiconductors, Journal de Physique, in press.
8. R. S. Huang and P. H. Ladbrooke, “The physics of excess electron velocity in submicron-channel FETs,” J. Appl. Phys., vol. 48, pp. 4791-4798, November 1977.
9. D. K. Ferry and J. R. Barker, “On the physics and modeling of small semiconductor devices III: transient response in the finite collision-duration regime,” Solid-State Electron., vol. 23, pp. 545-549, March 1980.
10. K. K. Thornber, “Relation of drift velocity to low-field mobility and high-field saturation velocity,” J. Appl. Phys., vol. 51, pp. 2127-2136, April 1980.
11. K. K. Thornber, “Applications of scaling to problems in high-field electronic transport,” J. Appl. Phys., vol. 52, pp. 279-290, January 1981.
12. A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility in the inverted <100> silicon surface,” IEDM Tech. Digest, pp. 18-21, Washington, D.C., 1979.
13. J. A. Cooper, and D. F. Nelson, “Measurements of the highfield drift velocity of electrons in inversion layers in silicon,” IEEE Elect. Device Lett, EDL-2, pp. 171-173, July 1981.
14. K. K. Thornber, D. F. Nelson and J. A. Cooper, Jr., “Cube-root broadening of surface-charge packets,” Appl. Phys. Lett., vol. 39, pp. 843-845, November 1981.
15. W. Fichtner, E. N. Fuls, R. L. Johnston, T. T. Sheng and R. K. Watts, “Experimental and theoretical characterization of submicron MOSFETs,” IEDM Tech. Digest, pp. 24-27, Washington, D.C., 1980.
16. W. Fichtner and D. J. Rose, “On the numerical solution of nonlinear elliptic PDES arising from semiconductor device modeling,” in Elliptic Problem Solvers, pp. 277-284, M. Schultz, ed., NY: Academic Press, Inc., 1981.