Observation of Electron Velocity Overshoot in Sub-100-nm-channel MOSFET's in Silicon

IEEE Electron Device Letters

Volumn 6, Issue 12, 1985, Pages 665-667

  Chou, S Y ^a   Antoniadis, Dimitri A ^a   Smith, Henry I ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - VELOCITY ANALYZERS; LITHOGRAPHY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, MOS;

MOSFETS; TRANSCONDUCTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0022184756     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26267     Document Type: Article

References (14)

1. J. G. Ruch, IEEE Trans. Electron Devices, vol. ED-19, p. 652, 1972.
2. R. S. Huang and P. H. Ladbrooke, J. Appl. Phys., vol. 48, p. 4791, 1977.
3. R. K. Cook and J. Frey, IEEE. Trans. Electron Devices, vol. ED-29, p. 970, 1982.
4. F. F. Fang and A. B. Fowler, J. Appl. Phys., vol. 41, p. 1825, 1970.
5. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, p. 46.
6. S. Y. Chou, Henry I. Smith, and D. A. Antoniadis to be published in J. Vac. Sci. Technol. B, Nov./Dec. 1985.
7. D. A. Antoniadis, S. E. Hansen, and R. W. Dutton, “SUPREM II-A program for IC process modeling and simulation,” Stanford University., Stanford, CA, Tech. Rep. SEL 78–020, June 1978.
8. S. Y. Chou, H. I. Smith, and D. A. Antoniadis, in Proc. 29th Int. Symp. Electron. Ion Photon Beams (Portland, OR); also J. Vac. Sci. Technol. B, Jan./Feb. 1986.
9. T. T. Sheng and R. B. Marcus, J. Elecrochem. Soc. Solid-State Sci. Tech., vol. 128, p. 881, 1981.
10. P. I. Suciu and R. L. Johnston, IEEE Trans. Electron Devices, vol. ED-27, p. 1846, 1980.
11. J. A. Cooper Jr. and D. F. Nelson, IEEE Electron Device Lett., vol. EDL-2, p. 171, 1981.
12. T. Ando, A. B. Fowier, and F. Stern, Rev. Mod. Phys., vol. 54, p. 457, 1982.
13. K. Seeger, Semiconductor Physics. New York: Spring-Verlag, 1973, p. 52.
14. S. Y. Chou and D. A. Antoniadis, “Relationship between measured and intrisic transconductances of FET's,” submitted to IEEE Trans. Electron Devices.