Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

Applied Physics Letters

Volumn 70, Issue 23, 1997, Pages 3140-3142

  Colocci, M ^a,c   Bogani, F ^a,d   Carraresi, L ^a,c   Mattolini, R ^a,c   Bosacchi, A ^b   Franchi, S ^b   Frigeri, P ^b   Rosa Clot, M ^c   Taddei, S ^c  

^a INFM   (Italy)

^b CNR   (Italy)

^c Dipartimento di Fisica   (Italy)

^d Dipartimento di Energetica   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

DECONVOLUTION; GAUSSIAN COMPONENTS; THREE DIMENSIONAL TRANSITION; TWO DIMENSIONAL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031560893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119114     Document Type: Article

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