Structural aspects of the growth of InAs islands on InP substrate

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 615-619

  Ponchet, A ^a   Le Corre, A ^b   L'Haridon, H ^b   Lambert, B ^b   Salaun S ^b   Groenen, J ^c   Carles, R ^c  

^a CEMES CNRS   (France)

^b ORANGE LABS   (France)

^c UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC RELAXATION MECHANISM; INDIUM ARSENIDE; ISLAND DENSITY; ISLAND SPATIAL DISTRIBUTION; STRANSKY-KRASTANOV GROWTH MODE; STRUCTURAL ASPECTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0029714254     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00374-6     Document Type: Article

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