Reexchange controlled diffusion in surfactant-mediated epitaxial growth: Si on as-terminated Si(111)

Physical Review Letters

Volumn 80, Issue 13, 1998, Pages 2873-2876

  Schroeder, K ^a   Engels, B ^a   Richard, P ^a   Blugel S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ARSENIC; CHEMICAL BONDS; DIFFUSION IN SOLIDS; ELECTRON ENERGY LEVELS; NANOSTRUCTURED MATERIALS; PASSIVATION; REACTION KINETICS; SEMICONDUCTING SILICON; SURFACE ACTIVE AGENTS;

ADATOM DIFFUSION BARRIER; ENERGY GAIN; EXCHANGE BARRIER; REEXCHANGE PROCESS;

EPITAXIAL GROWTH;

EID: 0032021948     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.80.2873     Document Type: Article

References (17)

1. M. Copel, M. C. Reuter, E. Kaxiras, and R. M. Tromp, Phys. Rev. Lett., 63, 632 (1989).
2. M. Horn-von Hoegen, et al, Phys. Rev. Lett., 67, 1130 (1991).
3. G. Meyer, B. Voigtländer, and N. M. Amer, Surf. Sci., 272, L541 (1992).
4. B. Voigtländer and A. Zinner, J. Vac. Sci. Technol. A, 12, 1932 (1994).
5. J. Tersoff, A. W. Denier van der Gon, and R. M. Tromp, Phys. Rev. Lett., 72, 266 (1994).
6. M. A. Olmstead, R. D. Bringans, R. I. G. Uhrberg, and R. Z. Bachrach, Phys. Rev. B, 34, 6041 (1986)
7. J. R. Patel, J. A. Golovchenko, P. E. Freeland, and H.-J. Gossmann, Phys. Rev. B, 36, 7715 (1987).
8. B. Voigtländer, A. Zinner, Th. Weber, and H. P. Bonzel, Phys. Rev. B, 51, 7583 (1995).
9. E. Kaxiras, Mater. Sci. Eng. B, 30, 175 (1995).
10. D. Kandel and E. Kaxiras, Phys. Rev. Lett., 75, 2742 (1995).
11. J. J. Mortensen, Y. Morikawa, B. Hammer, and J. K. Norskov, J. Catal., 169, 85 (1997).
12. D. Vanderbilt, Phys. Rev. B, 32, 8412 (1985).
13. L. Kleinman and D. M. Bylander, Phys. Rev. Lett., 48, 1425 (1982).
14. S. H. Vosko, L. Wilk, and M. Nusair, Can. J. Phys., 58, 1200 (1980).
15. J. L. Martins and M. L. Cohen, Phys. Rev. B, 37, 6134 (1988).
16. R. Fletcher, Practical Methods of Optimization (John Wiley & Sons, New York, 1987).
17. U. Gösele, W. Frank, and A. Seeger, Appl. Phys., 23, 361 (1980).