Determination of segregation, elastic strain and thin-foil relaxation in InxGa1xAs islands on GaAs(001) by highresolution transmission electron microscopy

Philosophical Magazine Letters

Volumn 74, Issue 5, 1996, Pages 309-315

  Tillmann, K ^a   Thust, A ^a   Lentzen, M ^a   Swiatek, P ^a   Forster, A ^a   Urban, K ^a   Laufs, W ^b   Gerthsen, D ^c   Remmele, T ^c   Rosenauer, A ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); ELASTICITY; EPITAXIAL GROWTH; FINITE ELEMENT METHOD; IMAGE ANALYSIS; LATTICE CONSTANTS; PHASE INTERFACES; RELAXATION PROCESSES; SEGREGATION (METALLOGRAPHY); STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC STRAIN; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ISLAND STRUCTURES; STRAIN DISTRIBUTION; THIN FOIL RELAXATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030283807     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008396180029     Document Type: Article

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