0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax

IEEE Electron Device Letters

Volumn 12, Issue 9, 1991, Pages 483-485

  Aina, L ^a   Burgess, M ^a   Mattingly, M ^a   O’Connor, James M ^a   Meerschaert, A ^a   Tong, M ^b   Ketterson, A ^b   Adesida, Ilesanmi ^b  

^a HONEYWELL   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS--GAIN; ELECTRONS; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS--APPLICATIONS; TRANSISTORS, HIGH ELECTRON MOBILITY--FABRICATION;

DRAIN-SOURCE BREAKDOWN VOLTAGE; EFFECTIVE ELECTRON VELOCITY; EXTRINSIC DC TRANSCONDUCTANCES; MAXIMUM STABLE GAIN;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0026219763     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.116925     Document Type: Article

References (8)

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