Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation

Solid State Electronics

Volumn 35, Issue 10, 1992, Pages 1543-1548

  Zimmer, T ^a   Ouro Bodi, D ^a   Dumas, J M ^b   Labat, N ^a   Touboul, A ^a   Danto, Y ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPUTER SIMULATION; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); IONIZATION; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON IMPACT IONIZATION; IMPACT IONIZATION PHENOMENON; KINK EFFECT; SOFTWARE PACKAGE SPICE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0026938379     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90096-U     Document Type: Article

References (15)

1. Int. Symp. GaAs and Related Compounds
2. 1-xAs modulation-doped heterostructures grown by molecular-beam epitaxy
3. GaAs MESFET interface considerations
4. Infrared absorption of the 78-meV acceptor in GaAs
5. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
6. GaAs FET device and circuit simulation in SPICE
7. Semiconducting and other major properties of gallium arsenide