Analysis of Kink Characteristics in Silicon-on-lnsulator MOSFET’s Using Two-Carrier Modeling

IEEE Transactions on Electron Devices

Volumn 32, Issue 2, 1985, Pages 458-462

  Kato, Koichi ^a   Wada, Tetsunori ^a   Taniguchi, Kenji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039147383     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.21963     Document Type: Article

References (10)

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4. E. Sano, R. Kasai, K. Ohwada, and H. Ariyoshi: “A two-dimensional analysis for MOSFET’s fabricated on buried SiO layer,” IEEE Trans. Electron Devices, vol. ED-27, pp. 2043–2050, 1980.
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6. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley.
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9. R. Van Overstraeten and H. De Man, “Measurement of the ionization rates in diffused silicon p-n junctions,” Solid-State Electron., vol. 13, pp. 583–608, 1970.
10. S. P. Gaur and D. H. Navon, “Two-dimensional carrier flow in a transistor structure under nonisothermal conditions,” IEEE Trans. Electron Devices, vol. ED-23, pp. 50–57, 1976.