Impact Ionization and Transport in the InAlAs/n+-InP HFET

IEEE Transactions on Electron Devices

Volumn 42, Issue 9, 1995, Pages 1574-1582

  Greenberg, David R ^a   del Alamo, Jesús A ^a   Bhat, Rajaram ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; GATES (TRANSISTOR); HETEROJUNCTIONS; IONIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

CHANNEL DOPING; DRAIN-SOURCE BREAKDOWN VOLTAGE; IMPACT IONIZATION; THRESHOLD VOLTAGE DISTRIBUTION;

FIELD EFFECT TRANSISTORS;

EID: 0029379468     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.405270     Document Type: Article

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