Improved Model for Kink Effect in AlGaAs/InGaAs Heterojunction FET’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 12, 1994, Pages 2262-2267

  Hori, Yasuko ^a   Kuzuhara, Masaaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

CARRIER TRAPPING; HETEROJUNCTION FIELD EFFECT TRANSISTORS; HOLE TRAPS; KINK EFFECT;

FIELD EFFECT TRANSISTORS;

EID: 0028742726     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.337437     Document Type: Article

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