Drastic Reduction of Gate Leakage in InAlAs/InGaAs HEMT’s Using a Pseudomorphic InAlAs Hole Barrier Layer

IEEE Transactions on Electron Devices

Volumn 41, Issue 10, 1994, Pages 1685-1690

  Fritzsche, Dieter ^c   Nickel, Heinric ^c   Lösch, Rainer ^c   Schlapp, Winfried ^c   Tegude, Franz Josef ^c  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b NOKIA RESEARCH CENTER   (United States)

^c Telekom FTZ ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; GATES (TRANSISTOR); LEAKAGE CURRENTS; NUMERICAL METHODS; OPTOELECTRONIC DEVICES; OSCILLATIONS; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRON HOLE PAIR; GATE LEAKAGE; HOLE BARRIER; HOT ELECTRONS; KINK EFFECT; PHOTOCURRENT; RECEIVER CIRCUITS; VALENCE BAND DISCONTINUITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028517083     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.324575     Document Type: Article

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