Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and fmax of 350 GHz

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1995, Pages 737-740

  Chertouk, M ^a   Heiss, H ^a   Xu, D ^a   Kraus, S ^a   Klein, W ^a   Boehm, G ^a   Traenkle, G ^a   Weimann, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

COMPOSITE CHANNELS; METAMORPHIC GROWTH TECHNOLOGY; POWER GAIN ENHANCEMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029217423     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)