Kink-Free Alinas/Gainas/Inp Hemts Grown by Molecular Beam Epitaxy

Electronics Letters

Volumn 26, Issue 12, 1990, Pages 779-780

  Luo, L F ^a   Longenbach, K F ^a   Wang, W I ^a  

^a Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

epitaxial growth; Epitaxy; Semiconductor devices and material

Indexed keywords

MOLECULAR BEAM EPITAXY; TRANSISTORS, FIELD EFFECT--ELECTRIC PROPERTIES;

EXTRINSIC TRANSCONDUCTANCE; HIGH ELECTRON MOBILITY TRANSISTORS; KINK;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0025702367     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19900508     Document Type: Article

References (6)

1. Chao, P. C., Tessmer, A. J., Duh, K. G., Ho, P., Kao, M., Smith, P. M., Ballingall, I. M., Liu, S.-M., and Jabra, A. A.: ‘W-band low-noise InAlAs/InGaAs lattice-matched HEMTs’, IEEE Electron Device Lett., 1990, 11, pp. 59-62.
2. Mishra, M. K., Brown, A. S., Rosenbaum, S. E., Hopper, C. E., Pierce, M. W., Delaney, M. J., Vaughn, S., and White, K.: ‘Microwave performance of AlInAs-GalnAS HEMTs with 0.2- and 0.1-μm gate length’, IEEE Electron Dev. Lett., 1988, 9, pp. 647-649.
3. Mishra, M. K., Brown, A. S., Jelloian, L. M., Hackett, L. H., and Delaney, M. J.: ‘High-performance submicrometer AlInAs-GalnAs HEMTs’, IEEE Electron Dev. Lett., 1988, 9, pp. 41-43.
4. Kuang, J. B., Tasker, P. J., Wang, G. W., Chen, Y. K., Eastman, L. F., Aina, O. A., Hier, H., and Fathmulla, A.: ‘Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFET's’, IEEE Electron Dev. Lett., 1988, 9, pp. 630-632.
5. Palmateer, L. F., Tasker, P. J., Schaff, W. J., Nguyan, L. D., and Eastman, L. F.: ‘DC and RF measurements of the kink effect in 0.2 μm gate length AlInAs/GalnAs/InP modulation-doped field-effect transistors’, Appl. Phys. Lett., 1989, 54, pp. 2139-2141.
6. Brown, A. S., Mishra, U. K., Chou, C. S., Hooper, C. E., Malendes, M. A., Thompson, M., Larson, L. E., Rosenbaum, S. E., and Delaney, M. J.: ‘AlInAs-GalnAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE’, IEEE Electron Dev. Lett., 1989, 10, pp. 565-567.