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Applied Physics Letters
Volumn 51, Issue 22, 1987, Pages 1824-1826
Influence of the grain structure on the Fermi level in polycrystalline silicon: A quantum size effect
Author keywords

[No Author keywords available]
Indexed keywords

EID: 0043062016     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.98482     Document Type: Article
Times cited : (8)
References (15)
  • 3
    • 84952856079 scopus 로고    scopus 로고
    • There is also a discrepancy between the measured [formula omitted] of As‐ and P‐doped poly‐Si gates at low carrier concentrations. At low doping levels the [formula omitted] is strongly influenced by gate depletion and the existence of a resistive sublayer near the [formula omitted] interface
  • 4
    • 0020783284 scopus 로고
    • cf., This region (which is not well understood either) is not discussed in the present work. The discrepancy there is unlikely to be related to a different grain texture.
    • (1983) IEEE Trans. Electron Devices , vol.ED‐30 , pp. 833
    • Lifshitz, N.1    Luryi, S.2
  • 5
    • 84952856081 scopus 로고    scopus 로고
    • These limits (approximately [formula omitted] for As and [formula omitted] for P; cf. Ref. 2) are different from the usual “metallurgical” solubility limits and have the following meaning: they represent the highest active carrier concentration at room temperature which can be obtained by implanting and annealing a high dose of the respective dopant atoms.
  • 7
    • 84952856075 scopus 로고    scopus 로고
    • (private communications)
    • Liu, R.1

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.