Carrier transport near the Si/SiO2 interface of a MOSFET

Solid State Electronics

Volumn 32, Issue 10, 1989, Pages 839-849

  Hansch W ^a   Vogelsang, Th ^a   Kircher, R ^a   Orlowski, M ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS--CHARGE CARRIERS; SEMICONDUCTING SILICON--CHARGE CARRIERS;

CARRIER DENSITY DISTRIBUTION; CARRIER TRANSPORT; CURRENT EQUATION; QUANTUM MECHANICAL CORRECTION; SEMICONDUCTOR INSULATOR INTERFACE; SOFTWARE PACKAGE MINIMOS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024751380     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90060-9     Document Type: Article

References (31)

1. Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistor
2. Self-Consistent Results for n-Type Si Inversion Layers
3. Self-Consistent Theory of the Electronic Structure of Inversion Layers. I. A New Method Using the Modified Local Density Approximation
4. A Modified Local Density Approximation. Electron Density in Inversion Layers
5. Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's
6. A mobility model for carriers in the MOS inversion layer
7. Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer
8. Quantum Theory of the Dielectric Constant in Real Solids
9. MINIMOS 3: A MOSFET simulator that includes energy balance
10. The hot-electron problem in small semiconductor devices
11. Two-dimensional numerical simulation of impurity redistribution in VLSI processes