Gate capacitance attenuation in MOS devices with thin gate dielectrics

IEEE Electron Device Letters

Volumn 17, Issue 11, 1996, Pages 521-524

  Krisch, K S ^a,b   Bude, J D ^a,b   Manchanda, L ^a,b  

^a IEEE

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTROMAGNETIC WAVE ATTENUATION; GATES (TRANSISTOR); MOS DEVICES; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILM TRANSISTORS;

CAPACITANCE VOLTAGE BEHAVIOR; CARRIER STATISTICS; GATE CAPACITANCE ATTENUATION; QUANTUM EFFECTS; THIN GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0030289752     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.541768     Document Type: Article

References (10)

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