Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

IEEE Transactions on Nuclear Science

Volumn 59, Issue 6, 2012, Pages 3077-3080

  Weaver, B D ^a   Boos, J B ^a   Cress, C D ^a   Martin, Pa ^b,c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c NEW MEXICO INSTITUTE OF MINING AND TECHNOLOGY   (United States)

Author keywords

Displacement damage; gallium nitride; high electron mobility transistors; proton irradiation

Indexed keywords

EID: 85008573162     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.2012.2224371     Document Type: Article

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