Universal behavior in irradiated high-electron-mobility transistors

Applied Physics Letters

Volumn 80, Issue 15, 2002, Pages 2791-2793

  Weaver, B D ^a   Jackson, E M ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CONSTANT OF PROPORTIONALITY; DEFECT CONCENTRATIONS; DEVICE GEOMETRIES; DONOR LAYERS; DOPING PROFILES; GAAS; GAAS/ALGAAS; GATE LENGTH; INDUCED DEFECTS; INGAAS/INALAS; LAYER THICKNESS; LINEAR DEPENDENCE; LINEAR RELATIONSHIPS; OPERATING VOLTAGE; RADIATION TOLERANT; RADIATION-INDUCED; UNIVERSAL BEHAVIORS;

DEFECTS; DRAIN CURRENT; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955982255     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1470243     Document Type: Article

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