Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3192-3195

  Kalavagunta, Aditya ^a,b   Silvestri, M ^c   Beck, M J ^d,e   Dixit, S K ^f   Schrimpf, Ronald D ^a   Reed, R A ^a   Fleetwood, D M ^a   Shen, L ^g   Mishra, U K ^g  

^a VANDERBILT UNIVERSITY   (United States)

^b Technical Sales Engineer Comsol Multiphysics GmbH   (United States)

^c UNIVERSITY OF PADOVA   (Italy)

^d VANDERBILT UNIVERSITY   (United States)

^e UNIVERSITY OF KENTUCKY   (United States)

^f INTEL CORPORATION   (United States)

^g University of California   (United States)

Author keywords

Deep level traps; Displacement damage; Gan; High lectron mobility transistor (HEMTs); Polarization charge; Proton radiation

Indexed keywords

DEEP LEVEL; DISPLACEMENT DAMAGE; DISPLACEMENT DAMAGES; POLARIZATION CHARGES; PROTON RADIATIONS;

ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; POLARIZATION; PROTON IRRADIATION; PROTONS; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 72349089907     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2034156     Document Type: Conference Paper

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