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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 5, 2010, Pages

Proton irradiation effects on AlN/GaN high electron mobility transistors

(14) Lo, C F a Chang, C Y a Chu, B H a Kim, H Y b Kim, J b Cullen, David A c Zhou, Lin c Smith, David J c Pearton, S J a Dabiran, Amir d Cui, B d Chow, P P d Jang, S e Ren, F a

a University of Florida (United States)

b Korea University (South Korea)

c ARIZONA STATE UNIVERSITY (United States)

d SVT ASSOCIATES (United States)

e Dankook University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON MOBILITY; PROTON IRRADIATION; PROTONS; RADIATION;

CARRIER REMOVAL; CARRIER SCATTERING; CURRENT MODULATION; FLUENCES; GATE CURRENT; HIGH ENERGY PROTON; IRRADIATION EFFECT; POSITIVE GATE BIAS; RADIATION-INDUCED; REVERSE BIAS; SATURATION DRAIN CURRENT; SOURCE-DRAIN; SURFACE TRAP;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957741389 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3482335 Document Type: Article

Times cited : (24)

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