Process dependence of proton-induced degradation in GaN HEMTs

IEEE Transactions on Nuclear Science

Volumn 57, Issue 6 PART 1, 2010, Pages 3060-3065

  Roy, Tania ^a   Zhang, En Xia ^a   Puzyrev, Yevgeniy S ^b   Fleetwood, Daniel M ^a   Schrimpf, Ronald D ^a   Choi, Bo K ^a   Hmelo, Anthony B ^b   Pantelides, Sokrates T ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

1 f noise; AlGaN GaN; degradation; HEMT; proton

Indexed keywords

1/F NOISE; ALGAN/GAN; ALGAN/GAN HEMTS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DIVACANCIES; FLUENCES; GAN HEMTS; HEMT; N VACANCY; PROCESS DEPENDENCE; PROTON RADIATIONS; PROTON-INDUCED DEGRADATION; RICH CONDITIONS;

DEGRADATION; DENSITY FUNCTIONAL THEORY; GALLIUM ALLOYS; GALLIUM NITRIDE; PROTON IRRADIATION;

PROTONS;

EID: 78650415466     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2073720     Document Type: Conference Paper

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