An analysis of the effects of low-energy electron irradiation of AlGaN/GaN HFETs

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 1946-1952

  McClory, John W ^b   Petrosky, James C ^a,b   Sattler, James M ^c   Jarzen, Thomas A ^d  

^a IEEE

^b AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d DEFENSE THREAT REDUCTION AGENCY   (United States)

Author keywords

Electron irradiation; Gallium nitride; Heterojunction field effect transistors

Indexed keywords

CARRIER CONCENTRATION; DRAIN CURRENT; ELECTRON IRRADIATION; GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS;

COMPLEXING PRECURSORS;

HETEROJUNCTIONS;

EID: 37249041553     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910121     Document Type: Conference Paper

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