Electrostatic mechanisms responsible for device degradation in proton irradiated AlGaN/AlN/GaN HEMTs

IEEE Transactions on Nuclear Science

Volumn 55, Issue 4, 2008, Pages 2106-2112

  Kalavagunta, A ^a   Touboul, A ^a   Shen, L ^b   Schrimpf, R D ^a   Reed, R A ^a   Fleetwood, D M ^a   Jain, R K ^c   Mishra, U K ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b University of California   (United States)

^c LOCKHEED MARTIN   (United States)

Author keywords

Deep level traps; Displacement damage; GaN; High electron mobility transistor (HEMT); Polarization charge; Proton radiation

Indexed keywords

BENDING (DEFORMATION); CHARGE CARRIERS; CIVIL AVIATION; DEFECT DENSITY; DEGRADATION; DRAIN CURRENT;

DEEP LEVEL TRAPS; DISPLACEMENT DAMAGE; GAN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); POLARIZATION CHARGE; PROTON RADIATION;

CARRIER MOBILITY;

EID: 53349091794     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2001705     Document Type: Conference Paper

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