Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition

Applied Physics Letters

Volumn 109, Issue 19, 2016, Pages

  Alharbi, Abdullah ^a   Shahrjerdi, Davood ^a  

^a POLYTECHNIC UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; METAL INSULATOR TRANSITION; MONOLAYERS; SULFUR COMPOUNDS; TEMPERATURE;

COULOMB SCATTERING; INTERMEDIATE TEMPERATURES; METAL-TO-INSULATOR TRANSITIONS; PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY; STRAIN HETEROGENEITY; TEMPERATURE VARIABLES; THERMALLY ACTIVATED HOPPING; TRANSPORT MEASUREMENTS;

TUNGSTEN COMPOUNDS;

EID: 84994910834     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4967188     Document Type: Article

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