Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals

Applied Materials Today

Volumn 1, Issue 1, 2015, Pages 60-66

  Li, Shisheng ^a,b   Wang, Shunfeng ^a,b   Tang, Dai Ming ^c   Zhao, Weijie ^a,b   Xu, Huilong ^a,b   Chu, Leiqiang ^a,b   Bando, Yoshio ^c   Golberg, Dmitri ^c   Eda, Goki ^a,b  

^a National University of Singapore   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Halides; Transistors; Transition metal dichalcogenides; Tungsten diselenide; Tungsten disulfide; Two dimensional materials

Indexed keywords

ALKALI HALIDES; ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; MONOLAYERS; SELENIUM COMPOUNDS; SULFUR COMPOUNDS; TRANSISTORS; TRANSITION METALS;

HALIDES; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE; TUNGSTEN DISULFIDE; TWO-DIMENSIONAL MATERIALS;

TUNGSTEN COMPOUNDS;

EID: 84976498301     PISSN: None     EISSN: 23529407     Source Type: Journal    
DOI: 10.1016/j.apmt.2015.09.001     Document Type: Article

References (50)

1. W.J. Zhao, R.M. Ribeiro, and G. Eda Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets Acc. Chem. Res. 48 2015 91 99
2. S.Z. Butler, S.M. Hollen, L. Cao, Y. Cui, J.A. Gupta, H.R. Gutierrez, T.F. Heinz, S.S. Hong, J. Huang, A.F. Ismach, E. Johnston-Halperin, M. Kuno, V.V. Plashnitsa, R.D. Robinson, R.S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M.G. Spencer, M. Terrones, W. Windl, and J.E. Goldberger Challenges, and opportunities in two-dimensional materials beyond graphene ACS Nano 7 2013 2898 2926
3. J.A. Wilsona, and A.D. Yoffea The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties Adv. Phys. 18 1969 193 335
4. D. Jariwala, V.K. Sangwan, L.J. Lauhon, T.J. Marks, and M.C. Hersam Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides ACS Nano 8 2014 1102 1120
5. 2 ACS Nano 7 2013 791 797
6. 2 Nano Lett. 10 2010 1271 1275
7. 2 Nano Lett. 15 2015 2336 2342
8. 2 and related transition-metal dichalcogenides Sci. Rep. 4 2014 6270
9. 2 with ambipolar ionic liquid-gated transistors Nano Lett. 12 2012 5218 5223
10. 2 p-FETs with chemically doped contacts Nano Lett. 12 2012 3788 3792
11. x contacts Nano Lett. 14 2014 1337 1342
12. 2 field effect transistors Nano Lett. 13 2013 1983 1990
13. 2 by sulfur-assisted chemical vapor deposition ACS Nano 8 2014 11543 11551
14. 2 layers on sapphire and imaging its grain boundary ACS Nano 7 2013 8963 8971
15. 2 p-n junctions Nat. Nanotechnol. 9 2014 268 272
16. A. Pospischil, M.M. Furchi, and T. Mueller Solar-energy conversion and light emission in an atomic monolayer p-n diode Nat. Nanotechnol. 9 2014 257 261
17. Y. Shi, H. Li, and L.J. Li Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques Chem. Soc. Rev. 44 2015 2744 2756
18. 2 sheets: synthesis and layer-dependent photoluminescence property Nanotechnology 24 2013 465705
19. 2 monolayers and device applications ACS Nano 8 2014 923 930
20. 2 monolayers APL Mater. 2 2014 101101
21. 2 with tunable device characteristics and growth mechanism study ACS Nano 9 2015 6119 6127
22. 2 atomic layers Nano Lett. 15 2015 709 713
23. 2 Nanoscale 6 2014 12096 12103
24. S.J. Yun, S.H. Chae, H. Kim, J.C. Park, J.H. Park, G.H. Han, J.S. Lee, S.M. Kim, H.M. Oh, J. Seok, M.S. Jeong, K.K. Kim, and Y.H. Lee Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils ACS Nano 9 2015 5510 5519
25. 2 crystals: moving toward the recyclable use of sapphire substrates ACS Nano 9 2015 6178 6187
26. 2 monolayers Nano Lett. 13 2013 3447 3454
27. 2 monolayer from chemical vapor deposition Adv. Opt. Mater. 2 2014 131 136
28. K. Kang, S.E. Xie, L.J. Huang, Y.M. Han, P.Y. Huang, K.F. Mak, C.J. Kim, D. Muller, and J. Park High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity Nature 520 2015 656 660
29. 2 thin films on glass - highly hydrophobic sticky surfaces J. Mater. Chem. 16 2006 122 127
30. 2 grown via metal-organic chemical vapor deposition ACS Nano 9 2015 2080 2087
31. 2 thin films on glass Polyhedron 22 2003 1499 1505
32. P. Schmidt, M. Binnewies, R. Glaum, and M. Schmidt Chemical Vapor Transport Reactions - Methods, Materials, Modeling 2013 InTech
33. 2 structures Nat. Nanotechnol. 10 2015 503 506
34. A.M. van der Zande, P.Y. Huang, D.A. Chenet, T.C. Berkelbach, Y.M. You, G.H. Lee, T.F. Heinz, D.R. Reichman, D.A. Muller, and J.C. Hone Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide Nat. Mater. 12 2013 554 561
35. 2 triangles ACS Nano 7 2013 10985 10994
36. T.S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J.S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J.B. Li, J.C. Grossman, and J.Q. Wu Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons Sci. Rep. 3 2013 2657
37. 2 Nanoscale 5 2013 9677 9683
38. 2 Phys. Rev. B 88 2013 195313
39. 2 Phys. Rev. B 87 2013 165409
40. O. Madelung, U. Rössler, and M. Schulz Semiconductors - Non-tetrahedrally Bonded Binary Compounds II 1996 Springer
41. S. McDonnell, A. Azcatl, R. Addou, C. Gong, C. Battaglia, S. Chuang, K. Cho, A. Javey, and R.M. Wallace Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments ACS Nano 8 2014 6265 6272
42. X.Z. Mao, Y. Xu, Q.X. Xue, W.X. Wang, and D.Q. Gao Ferromagnetism in exfoliated tungsten disulfide nanosheets Nanoscale Res. Lett. 8 2013 430
43. A. Avsar, J.Y. Tan, T. Taychatanapat, J. Balakrishnan, G.K. Koon, Y. Yeo, J. Lahiri, A. Carvalho, A.S. Rodin, E.C. O'Farrell, G. Eda, A.H. Castro Neto, and B. Ozyilmaz Spin-orbit proximity effect in graphene Nat. Commun. 5 2014 4875
44. 2: experimental and theoretical studies J. Chem. Soc. Faraday Trans. 99 1996 4561 4566
45. J.H. Kang, W. Liu, D. Sarkar, D. Jena, and K. Banerjee Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors Phys. Rev. X 4 2014 031005
46. 2 devices by oxygen and ozone 2015 (in preparation)
47. 2 ACS Nano 8 2014 8174 8181
48. 2 grown by chemical vapor deposition Nano Lett. 14 2014 1909 1913
49. Y.H. Lee, L.L. Yu, H. Wang, W.J. Fang, X. Ling, Y.M. Shi, C.T. Lin, J.K. Huang, M.T. Chang, C.S. Chang, M. Dresselhaus, T. Palacios, L.J. Li, and J. Kong Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces Nano Lett. 13 2013 1852 1857
50. 2 crystals: moving toward the recyclable use of sapphire substrates ACS Nano 9 2015 6178 6187