Two-dimensional semiconductors with possible high room temperature mobility

Nano Research

Volumn 7, Issue 12, 2014, Pages 1731-1737

  Zhang, Wenxu ^a   Huang, Zhishuo ^a   Zhang, Wanli ^a   Li, Yanrong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

ab initio; acoustic phonon; electron mobility; two dimensional (2D) materials

Indexed keywords

EID: 85027947532     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-014-0532-x     Document Type: Article

References (21)

1. Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene-like two-dimensional materials. Chem. Rev.2013, 113, 3766–3798.
2. Das Sarma, S.; Adam, S.; Hwang, E. H.; Ross, E. Electronic transport in two-dimensional graphene. Rev. Mod. Phys.2011, 83, 407.
3. Liao, L.; Lin, Y. C.; Bao, M. Q.; Cheng, R.; Bai, J. W.; Liu, Y.; Qu, Y. Q.; Wang, K. L.; Huang, Y.; Duan, X. F. High-speed graphene transistors with a self-aligned nanowire gate. Nature2010, 467, 305–308.
4. 2 MOSFETs. ACS Nano2012, 6, 8563–8569.
5. Castro, E. V.; Novoselov, K. S.; Morozov, S. V.; Peres, N. M. R.; Lopes dos Santos, J. M. B.; Nilsson, J.; Guinea, F.; Geim, A. K.; Castro Neto, A. H. Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect. Phys. Rev. Lett.2007, 99, 216802.
6. 2. Nat. Mater.2013, 12, 815–820.
7. 2 monolayers: A computational study. Phys. Rev. Lett.2012, 108, 156802.
8. 2 from first principles. Phys. Rev. B2012, 85, 115317.
9. 2 from first principles. Phys. Rev. B2013, 87, 115418.
10. 2 from first principles. Phys. Rev. B2013, 87, 235312.
11. 2 transistors be? Nano Lett.2011, 11, 3768–3773.
12. 2 transition-metal oxides and dichalcogenides in a honeycomb-like structure. J. Phys. Chem. C2012, 116, 8983–8999.
13. Lebègue, S.; Björkman, T.; Klintenberg, M.; Nieminen, R. M.; Eriksson, O. Two-dimensional materials from data filtering and ab initio calculations. Phys. Rev. X2013, 3, 031002.
14. Koepernik, K.; Eschrig, H. Full-potential nonorthogonal local-orbital minimum-basis band structure scheme. Phys. Rev. B1999, 59, 1743.
15. Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett.1996, 77, 3865.
16. Bardeen, J.; Shockey, W. Deformation potentials and mobilities in non-polar crystals. Phys. Rev.1950, 80, 72.
17. Takagi, S. I.; Hoyt, J. L.; Welser, J. J.; Gibbons, J. F. Comparative study of phonon limited mobility of two dimensional electrons in strained and unstrained Si metal oxide semiconductor field effect transistors. J. Appl. Phys.1996, 80, 1567.
18. Bruzzone, S.; Fiori, G. Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride. Appl. Phys. Lett.2011, 99, 222108.
19. Giannozzi, P.; Baroni, S.; Bonini, N.; Clandra, M.; Car, R.; Cavazzoni, C.; Ceresoli, D.; Chiarotti, G. L.; Cococcioni, M.; Dabo, I. et al. QUANTUM ESPRESSO: A modular and open-source software project for quantum simulations of materials. J. Phys: Cond. Matt.2009, 21, 395502.
20. Fang, H.; Tosun, M.; Seol, G.; Chang, T. C.; Takei, K.; Guo, J.; Javey, A. Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. Nano Lett.2013, 13, 1991–1995.
21. 2 monolayers: An ab initio study. Phys. Rev. B2013, 88, 075420.