Deep energy levels in RuO2/4H-SiC Schottky barrier structures

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Stuchlikova, L ^a   Buc, D ^a   Harmatha, L ^a   Helmersson, U ^b   Chang, W H ^c   Bello, I ^c,d  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; STOICHIOMETRY;

DEEP ENERGY LEVELS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODE STRUCTURES; THERMAL ACTIVATION ENERGIES;

RUTHENIUM COMPOUNDS;

EID: 84988274684     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195775     Document Type: Article

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