Formation of surface states during Schottky barrier fabrication on Al-doped p-type 6H-SiC

Diamond and Related Materials

Volumn 13, Issue 4-8, 2004, Pages 1166-1170

  Venter, A ^a   Samiji, M E ^a   Leitch, A W R ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

Electrical properties and characterization; P type doping; Schottky diodes; Silicon Carbide

Indexed keywords

ACTIVATION ANALYSIS; ALUMINUM COMPOUNDS; ANNEALING; CAPACITANCE; CARRIER CONCENTRATION; DOPING (ADDITIVES); PASSIVATION;

BARRIER HEIGHT; INTERFACE STATES; REVERSE BIAS ANNEALING; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

DIAMOND;

EID: 2442473969     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.02.007     Document Type: Article

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