Radiation-induced defects in 4H- And 6H-SiC epilayers studied by positron annihilation and deep-level transient spectroscopy

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 489-492

  Kawasuso, A ^a,d   Weidner, M ^b   Redmann, F ^a   Frank, T ^b   Krause Rehberg, R ^a   Pensl, G ^b   Sperr, P ^c   Triftshauser W ^c   Itoh, H ^d  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^d JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Deep level transient spectroscopy; Electron irradiation; Positron annihilation; Vacancies

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; POSITRON ANNIHILATION; SILICON CARBIDE; DEFECTS; ELECTRONS; EPILAYERS; POSITRONS; SILICON WAFERS; VACANCIES;

RADIATION INDUCED DEFECTS; SILICON VACANCIES; VACANCY DEFECTS; HIGH QUALITY; POLYTYPES; SIC EPILAYERS;

VACANCIES; DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 33646198325     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.489     Document Type: Article

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