Growth-related structural defects in seeded sublimation-grown SiC

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1272-1275

  Tuominen, M ^a,b   Yakimova, R ^a,b   Prieur, E ^c,e   Ellison, A ^a   Tuomi, T ^d   Vehanen, A ^b,e   Janzen E ^a,e  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Outokumpu Semitronic AB   (Sweden)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d AALTO UNIVERSITY   (Finland)

^e Okmetic Oyj   (Finland)

Author keywords

4H SiC; 6H SiC; Sublimation; Synchrotron X ray photography

Indexed keywords

EID: 0007489551     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00096-4     Document Type: Article

References (7)

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