Growth and characterization of RuO2 films prepared by reactive unbalanced magnetron sputtering

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2000, Pages 465-468

  Buc D ^a,b   Music, D ^a   Helmersson, U ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

FILM PREPARATION; MAGNETRON SPUTTERING; MICROSYSTEMS; RUTHENIUM ALLOYS; SEMICONDUCTOR DEVICES; SUBSTRATES; X RAY DIFFRACTION;

CONSTANT VOLTAGE MODE; ELECTRICAL AND MECHANICAL PROPERTIES; NANOINTENDATION; OXYGEN FLOW RATIOS; REACTIVE UNBALANCED MAGNETRON SPUTTERING; REDUCED MODULUS; SUBSTRATE BIAS VOLTAGES; TOTAL PRESSURE;

BIAS VOLTAGE;

EID: 84951936284     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2000.889546     Document Type: Conference Paper

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