Determining the generation lifetime in a MOS capacitor using linear sweep techniques

Solid-State Electronics

Volumn 48, Issue 12, 2004, Pages 2339-2342

  Ťapajna, Milan ^a   Harmatha, Ladislav ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

Generation lifetime profiling; Linear sweep technique; MOS capacitor; Surface generation velocity

Indexed keywords

ANTIMONY; ELECTRIC CONDUCTORS; ELECTRIC POTENTIAL; OXIDATION; RELAXATION PROCESSES; SEMICONDUCTOR DOPING; SILICA; TIME DOMAIN ANALYSIS;

GENERATION LIFETIME PROFILING; LINEAR SWEEP TECHNIQUE; SURFACE GENERATION VELOCITY; THERMAL OXIDATION;

MOS CAPACITORS;

EID: 4544274517     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.057     Document Type: Article

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