Experimental and simulated results of SiC microwave power MESFETs

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 1, 1997, Pages 409-419

  Trew, R J ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONTACTS; EPITAXIAL GROWTH; INTEGRATED CIRCUIT MANUFACTURE; MESFET DEVICES; MICROWAVE DEVICES; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

MICROWAVE POWER MESFET; STATIC INDUCTION TRANSISTORS (SIT);

SILICON CARBIDE;

EID: 0031191172     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199707)162:1<409::AID-PSSA409>3.0.CO;2-O     Document Type: Article

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