Effects of C/Si ratio in fast epitaxial growth of 4H-SiC(0 0 0 1) by vertical hot-wall chemical vapor deposition

Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 370-376

  Fujiwara, H ^a,b   Danno, K ^a   Kimoto, T ^a   Tojo, T ^b   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b Toyotanso ^*  (Japan)

Author keywords

A1. Doping; A3. Chemical vapor deposition; A3. Vapor phase epitaxy; B2. Semiconducting silicon compounds

Indexed keywords

ABSORPTION; CHEMICAL VAPOR DEPOSITION; CRYSTALS; DOPING (ADDITIVES); HYDROGEN; SCHOTTKY BARRIER DIODES; VAPOR PHASE EPITAXY;

ABSORPTION COEFFICIENTS; C/SI RATIO; CVD REACTORS; PIN DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 22144499613     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.093     Document Type: Article

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