An Accurate Empirical Model Based on Volterra Series for FET Power Detectors

IEEE Transactions on Microwave Theory and Techniques

Volumn 64, Issue 5, 2016, Pages 1431-1441

  Andersson, Michael A ^a   Stake, Jan ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Analytical model; field effect transistors (FETs); graphene; microwave detectors; power detectors; terahertz detectors; Volterra

Indexed keywords

DRAIN CURRENT; HETEROJUNCTION BIPOLAR TRANSISTORS; RECONFIGURABLE HARDWARE; SCATTERING PARAMETERS;

CLOSED-FORM EXPRESSION; ELECTRICAL MODELING; FREQUENCY DEPENDENCE; INTRINSIC CAPACITANCE; NOISE EQUIVALENT POWER; PARASITIC RESISTANCES; SMALL-SIGNAL CIRCUIT; TAYLOR SERIES EXPANSIONS;

FIELD EFFECT TRANSISTORS;

EID: 84979465990     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2016.2532326     Document Type: Article

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